Reliability of Electronic Components

The objective of this book is to better understand why components fail, addressing the needs of engineers who will apply reliability principles in design, manufacture, testing, and field service. It so contributes to new approaches and the development of electronic and telecommunications component reliability. As a reference source, it summarizes the knowledge on failure modes, degradation and mechanisms, including a survey of accelerated testing, achieving better reliability, total quality topics, screening tests and prediction methods. A detailed index, a glossary, acronym lists, reliability dictionaries and a rich specific bibliography round the benefit offered by the book. The technical level suites to senior and graduate students, as well as to experts and managers in industries.

Klappentext
This application-oriented professional book explains why components fail, addressing the needs of engineers who apply reliability principles in design, manufacture, testing and field service. A detailed index, a glossary, acronym lists, reliability dictionaries and a rich specific bibliography complete the book.

Inhalt
1 Introduction.- 1.1 Definition of reliability.- 1.2 Historical development perspective.- 1.3 Quality and reliability.- 1.4 Economics and optimisation.- 1.5 Probability; basic laws.- 1.5.1 Probability distributions.- 1.5.2 Basic reliability distribution theory.- 1.6 Specific terms.- 1.6.1 The generalised definition of l and MTBF.- 1.7 Failures types.- 1.7.1 Failures classification.- 1.8 Reliability estimates.- 1.9 "Bath-tub" failure curve.- 1.10 Reliability of electronic systems.- 1.10.1 Can the batch reliability be increased?.- 1.10.2 What is the utility of screening tests?.- 1.10.3 Derating technique.- 1.10.4 About the testability of electronic and telecommunication systems.- 1.10.5 Accelerated ageing methods for equipped boards.- 1.10.6 Operational failures.- 1.10.7 FMEA/FMECA method.- 1.10.8 Fault tree analysis (FTA).- 1.10.8.1 Monte Carlo techniques.- 1.10.9 Practical recommendations.- 1.10.10 Component reliability and market economy.- 1.11 Some examples.- References.- 2 State of the Art in Reliability.- 2.1 Cultural features.- 2.1.1 Quality and reliability assurance.- 2.1.2 Total quality management (TQM).- 2.1.3 Building-in reliability (BIR).- 2.1.4 Concurrent engineering (CE).- 2.1.5 Acquisition reform.- 2.2 Reliability building.- 2.2.1 Design for reliability.- 2.2.2 Process reliability.- 2.2.2.1 Technological synergies.- 2.2.3 Screening and burn-in.- 2.2.3.1 Burn-in.- 2.2.3.2 Economic aspects of burn-in.- 2.2.3.3 Other screening tests.- 2.2.3.4 Monitoring the screening.- 2.3 Reliability evaluation.- 2.3.1 Environmental reliability testing.- 2.3.1.1 Synergy of environmental factors.- 2.3.1.2 Temperature cycling.- 2.3.1.3 Behavior in a radiation field.- 2.3.2 Life testing with noncontinous inspection.- 2.3.3 Accelerated testing.- 2.3.3.1 Activation energy depends on the stress level.- 2.3.4 Physics of failure.- 2.3.4.1 Drift, drift failures and drift behaviour.- 2.3.5 Prediction methods.- 2.3.5.1 Prediction methods based on failure physics.- 2.3.5.2 Laboratory versus operational reliability.- 2.4 Standardisation.- 2.4.1 Quality systems.- 2.4.2 Dependability.- References.- 3 Reliability of Passive Electronic Parts.- 3.1 How parts fail.- 3.2 Resistors.- 3.2.1 Some important parameters.- 3.2.2 Characteristics.- 3.2.3 Reasons for inconstant resistors [3.8]...[3.10].- 3.2.3.1 Carbon film resistors (Fig. 3.4).- 3.2.3.2 Metal film resistors.- 3.2.3.3 Composite resistors (on inorganic basis).- 3.2.4 Some design rules.- 3.2.5 Some typical defects of resistors.- 3.2.5.1 Carbon film resistors.- 3.2.5.2 Metal film resistors.- 3.2.5.3 Film resistors.- 3.2.5.4 Fixed wirewound resistors.- 3.2.5.5 Variable wirewound resistors.- 3.2.5.6 Noise behaviour.- 3.3 Reliability of capacitors.- 3.3.1 Introduction.- 3.3.2 Aluminium electrolytic capacitors.- 3.3.2.1 Characteristics.- 3.3.2.2 Results of reliability research studies.- 3.3.2.3 Reliability data.- 3.3.2.4 Main failures types.- 3.3.2.5 Causes of failures.- 3.3.3 Tantalum capacitors.- 3.3.3.1 Introduction.- 3.3.3.2 Structure and properties.- 3.3.3.3 Reliability considerations.- 3.3.3.4 DC/C0 variation with temperature.- 3.3.3.5 The failure rate and the product CU.- 3.3.3.6 Loss factor.- 3.3.3.7 Impedance at 100 Hz.- 3.3.3.8 Investigating the stability of 35 V tantalum capacitor.- 3.3.3.9 The failure rate model.- 3.3.4 Reliability comparison.- 3.3.5 Another reliability comparison.- 3.3.6 Polyester film / foil capacitors.- 3.3.6.1 Introduction.- 3.3.6.2 Life testing.- 3.3.6.3 1 as a function of temperature and load.- 3.3.6.4 Reliability conclusions.- 3.3.7 Wound capacitors.- 3.3.8 Reliability and screening methods [3.37] [3.38].- 3.4 Zinc oxide (ZnO) varistors [3.39]...[3.45].- 3.4.1 Pulse behaviour of ZnO varistors.- 3.4.2 Reliability results.- 3.5 Connectors.- 3.5.1 Specifications profile.- 3.5.2 Elements of a test plan.- References.- 4 Reliability of Diodes.- 4.1 Introduction.- 4.2 Semiconductor diodes.- 4.2.1 Structure and properties.- 4.2.2 Reliability tests and results.- 4.2.3 Failure mechanisms.- a. Mechanical failure mechanisms.- b. Electrical failure mechanisms.- 4.2.4 New technologies.- 4.2.5 Correlation between technology and reliability.- 4.2.6 Intermittent short-circuits.- 4.3 Z diodes.- 4.3.1 Characteristics.- 4.3.2 Reliability investigations and results.- 4.3.3 Failure mechanisms.- 4.3.3.1 Failure mechanisms of Z diodes.- 4.3.3.2 Design for reliability.- 4.3.3.3 Some general remarks.- 4.3.3.4 Catastrophic failures.- 4.3.3.5 Degradation failures.- 4.4 Trans-Zorb diodes.- 4.4.1 Introduction.- 4.4.2 Structure and characteristics.- 4.5 Impatt (IMPact Avalanche and Transit-Time) diodes.- 4.5.1 Reliability test results for HP silicon single drift Impatt diodes.- 4.5.2 Reliability test results for HP silicon double drift Impatt diodes.- 4.5.3 Factors affecting the reliability and safe operation.- References.- 5 Reliability of Silicon Transistors.- 5.1 Introduction.- 5.2 Technologies and power limitations.- 5.2.1 Bipolar transistors.- 5.2.2 Unipolar transistors.- 5.3 Electrical characteristics.- 5.3.1 Recommendations.- 5.3.2 Safety Limits.- 5.3.3 The du/dt phenomenon.- 5.4 Reliability characteristics.- 5.5 Thermal fatigue.- 5.6 Causes of failures.- 5.6.1 Failure mechanisms.- 5.6.2 Failure modes.- 5.6.3 A check-up for the users.- 5.6.4 Bipolar transistor peripherics.- 5.7 The package problem.- 5.8 Accelerated tests.- 5.8.1 The Arrhenius model.- 5.8.2 Thermal cycling.- 5.9 How to improve the reliability.- 5.10 Some recommendations.- References.- 6 Reliability of Thyristors.- 6.1 Introduction.- 6.2 Design and reliability.- 6.2.1 Failure mechanisms.- 6.2.2 Plastic and hermetic package problems.- 6.2.3 Humidity problem.- 6.2.4 Evaluating the reliability.- 6.2.5 Thyristor failure rates.- 6.3 Derating.- 6.4 Reliability screens by General Electric.- 6.5 New technology in preparation: SITH.- References.- 7 Reliability of Integrated Circuits.- 7.1 Introduction.- 7.2 Reliability evaluation.- 7.2.1 Some reliability problems.- 7.2.2 Evaluation of integrated circuit reliability.- 7.2.3 Accelerated thermal test.- 7.2.4 Humidity environment.- 7.2.5 Dynamic life testing.- 7.3 Failure analysis.- 7.3.1 Failure mechanisms.- 7.3.1.1 Gate oxide breakdown.- 7.3.1.2 Surface charges.- 7.3.1.3 Hot carrier effects.- 7.3.1.4 Metal diffusion.- 7.3.1.5 Electromigration.- 7.3.1.6 Fatigue.- 7.3.1.7 Aluminium-gold system.- 7.3.1.8 Brittle fracture.- 7.3.1.9 Electrostatic Discharge (ESD).- 7.3.2 Early failures.- 7.3.3 Modeling IC reliability.- 7.4 Screening and burn-in.- 7.4.1 The necessity of screening.- 7.4.2 Efficiency and necessity of burn-in.- 7.4.3 Failures at screening and burn-in.- 7.5 Comparison between the IC families TTL Standard and TTL-LS.- 7.6 Application Specific Integrated Circuits (ASIC).- References.- 8 Reliability of Hybrids.- 8.1 Introduction.- …

#	Onlineshop	Preis CHF	Versand CHF	Total CHF
1	Seller	0.00	0.00	0.00