Single Crystals of Electronic Materials

Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more.

Autorentext
Professor Roberto Fornari is a professor at the University of Parma in Parma, Italy. From 1981 to 2003, Roberto Fornari was at the Institute for Electronic and Magnetic Materials of the Italian National Research Council, and from 2003 to 2013 he was Director of the Leibniz Institute for Crystal Growth (IKZ) and Full Professor at the Institute of Physics of the Humboldt University, Berlin. His research experience includes bulk and epitaxial semiconductors for advanced applications (GaAs, InP, GaN, AlN and InGaN), semiconducting oxides, solar silicon, silicon nanostructures. His current research focuses on gallium oxide and related alloys for power electronics and UV-detection.

Inhalt
1. Introduction 2. Electronic Silicon 3. Solar Silicon 4. Germanium 5. Silicon Carbide 6. III-Arsenides 7. III-Phosphides 8. III-Antiomides 9. CdTe and CdZnTe 10. II-sulphides and II-selenides 11. Diamond 12. GaN 13. AIN 14. ZnO 15. Al2O3 16. Ga2O3 17. In2O3 18. SnO2

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