Fundamentals of RF and Microwave Transistor Amplifiers

Fundamentals of RF and Microwave Transistor Amplifiers

Einband:
E-Book (pdf)
EAN:
9780470462317
Untertitel:
Englisch
Genre:
Elektronik, Elektrotechnik, Nachrichtentechnik
Autor:
Inder Bahl
Herausgeber:
Wiley-Interscience
Anzahl Seiten:
696
Erscheinungsdatum:
17.06.2009
ISBN:
978-0-470-46231-7

A Comprehensive and Up-to-Date Treatment of RF and Microwave
Transistor Amplifiers

This book provides state-of-the-art coverage of RF and microwave
transistor amplifiers, including low-noise, narrowband, broadband,
linear, high-power, high-efficiency, and high-voltage. Topics
covered include modeling, analysis, design, packaging, and thermal
and fabrication considerations.

Through a unique integration of theory and practice, readers
will learn to solve amplifier-related design problems ranging from
matching networks to biasing and stability. More than 240 problems
are included to help readers test their basic amplifier and circuit
design skills-and more than half of the problems feature fully
worked-out solutions.

With an emphasis on theory, design, and everyday applications,
this book is geared toward students, teachers, scientists, and
practicing engineers who are interested in broadening their
knowledge of RF and microwave transistor amplifier circuit
design.

Autorentext
Inder J. Bahl, PhD, has been working on microwave and millimeter wave GaAs ICs for more than twenty-five years. He is responsible for the design of over 400 MMICs, including low-noise amplifiers, driver amplifiers, broadband amplifiers, power amplifiers (high-power, high-efficiency, and broadband), dc and ac coupled transimpedance and limiting amplifiers, multi-bit phase shifters, narrow and broadband SPDT switches, redundant switches, programmable attenuators, balanced mixers, quadrature downconverters, upconverters, transmit chips, receive chips and transmit/receive chips. Dr. Bahl has also developed modules consisting of MMICs for PAR and ECM applications.

Zusammenfassung
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.

Inhalt
Foreword. Preface. Chapter 1: Introduction. 1.1 Transistor Amplifier. 1.2 Early History of Transistor Amplifiers. 1.3 Benefits of Transistor Amplifiers. 1.4 Transistors. 1.5 Design of Amplifiers. 1.6 Amplifier Manufacturing Technologies. 1.7 Applications of Amplifiers. 1.8 Amplifier Cost. 1.9 Current Trends. 1.10 Book Organization. References. Chapter 2: Linear Network Analysis. 2.1 Impedance Matrix. 2.2 Admittance Matrix. 2.3 ABCD Parameters. 2.4 S-Parameters. 2.5 Relationships Between Various 2-Port Parameters. References. Problems. Chapter 3: Amplifier Characteristics and Definitions. 3.1 Bandwidth. 3.2 Power Gain. 3.3 Input and Output VSWR. 3.4 Output Power. 3.5 Power Added Efficiency. 3.6 Intermodulation Distortion. 3.7 Harmonic Power. 3.8 Peak-to-Average Ratio. 3.9 Combiner Efficiency. 3.10 Noise Characterization. 3.11 Dynamic Range. 3.12 Multi-Stage Amplifier Characteristics. 3.13 Gate and Drain Pushing Factors. 3.14 Amplifier Temperature Coefficient. 3.15 Mean Time To Failure. References. Problems. Chapter 4: Transistors. 4.1 Transistor Types. 4.2 Si Bipolar Transistor. 4.3 GaAs MESFET. 4.4 Hetrojunction Field Effect Transistor. 4.5 Hetrojunction BipolarTransistors. 4.6 MOSFET. References. Problems. Chapter 5: Transistor Models. 5.1 Transistor Model Types. 5.2 MESFET Models. 5.3 pHEMT Models. 5.4 HBT Model. 5.5 MOSFET Models. 5.6 BJT Models. 5.7 Transistor Model Scaling. 5.8 Source- and Load-Pull Data. 5.9 Temperature Dependent Models. References. Problems. Chapter 6: Matching Network Components. 6.1 Impedance Matching Elements. 6.2 Transmission Lines Matching Elements. 6.3 Lumped Elements. 6.4 Bond Wire Inductors. 6.5 Broadband Inductors. References. Problems. Chapter 7: Impedance Matching Techniques. 7.1 One-Port and Two-Port Networks. 7.2 Narrowband Matching Techniques. 7.3 Wideband Matching Techniques. References. Problems. Chapter 8: Amplifier Classes and Analyses. 8.1 Classes of Amplifiers. 8.2 Analysis of Class-A Amplifiers. 8.3 Analysis of Class-B Amplifiers. 8.4 Analysis of Class-C Amplifiers. 8.5 Analysis of Class-E Amplifiers. 8.6 Analysis of Class-F Amplifiers. 8.7 Comparison Between Various Amplifier Classes. References. Problems. Chapter 9: Amplifier Design Methods. 9.1 Amplifier Design. 9.2 Amplifier Design techniques. 9.3 Matching Networks. 9.4 Amplifier Design Examples. 9.5 Silicon Based Handset Amplifier Design. References. Problems. Chapter 10: High-Efficiency Amplifier Techniques. 10.1 High-Efficiency Design. 10.2 Harmonic Reaction Amplifier. 10.3 Harmonic Injection Technique. 10.4 Harmonic Control Amplifier. 10.5 High-PAE Design Considerations. References. Problems. Chapter 11: Broadband Amplifier Techniques. 11.1 Transistor Bandwidth Limitations. 11.2 Broadband Amplifier Techniques. 11.3 Broadband Power ...


billigbuch.ch sucht jetzt für Sie die besten Angebote ...

Loading...

Die aktuellen Verkaufspreise von 6 Onlineshops werden in Realtime abgefragt.

Sie können das gewünschte Produkt anschliessend direkt beim Anbieter Ihrer Wahl bestellen.


Feedback