Silicon Heterostructure Handbook

Zusatztext "?a collection of 28 high-quality reviews rich in references! is a great success. The impact could go even further. I was very impressed on first reading! I was also very surprised by the contributors! since they are mostly eminent and very active in the field! though relatively young and representative of future trends. I was also excited by the up-to-date research content. Finally! this book will undoubtedly be an essential reference for researchers and an introduction for students just starting in the field."-Bao-Lian Su! Materials Today! Vol. 9! No. 1-2! Jan-Feb. 2006 Informationen zum Autor Cressler, John D. Klappentext Bringing the many aspects of Si-based heterostructures into one convenient resource! this book presents a comprehensive perspective of the field. It covers topics ranging from materials fabrication to devices! CAD! circuits! and applications. Each chapter is written by a leading international expert! ensuring adequate depth of coverage! up-to-date research results! and a comprehensive list of seminal references. A novel aspect of this handbook is that it contains "snap-shot" views of industrial state-of-the-art for devices and circuits and is designed to provide the reader with a useful basis of comparison for the current status and future course of the global Si heterostructure industry. Zusammenfassung An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation. Inhaltsverzeichnis Preface. Foreword. Introduction. SiGe and Si Strained-Layer Epitaxy. Fabrication of SiGe HBT BiCMOS Technology. SiGe HBTs. Heterostructure FETs. Other Heterostructure Devices. Optoelectronic Components. Measurement and Modeling. Circuits and Applications. Appendices. Index....

"a collection of 28 high-quality reviews rich in references, is a great success. The impact could go even further. I was very impressed on first reading, I was also very surprised by the contributors, since they are mostly eminent and very active in the field, though relatively young and representative of future trends. I was also excited by the up-to-date research content. Finally, this book will undoubtedly be an essential reference for researchers and an introduction for students just starting in the field."-Bao-Lian Su, Materials Today, Vol. 9, No. 1-2, Jan-Feb. 2006

Autorentext
Cressler, John D.

Klappentext
Bringing the many aspects of Si-based heterostructures into one convenient resource, this book presents a comprehensive perspective of the field. It covers topics ranging from materials fabrication to devices, CAD, circuits, and applications. Each chapter is written by a leading international expert, ensuring adequate depth of coverage, up-to-date research results, and a comprehensive list of seminal references. A novel aspect of this handbook is that it contains "snap-shot" views of industrial state-of-the-art for devices and circuits and is designed to provide the reader with a useful basis of comparison for the current status and future course of the global Si heterostructure industry.


Zusammenfassung
Presenting various aspects of Si-based heterostructures, this book covers topics ranging from materials fabrication to devices, CAD, circuits, and applications. Containing nearly 1000 figures along with appendices, it surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, and compact modeling.

Inhalt
Preface. Foreword. Introduction. SiGe and Si Strained-Layer Epitaxy. Fabrication of SiGe HBT BiCMOS Technology. SiGe HBTs. Heterostructure FETs. Other Heterostructure Devices. Optoelectronic Components. Measurement and Modeling. Circuits and Applications. Appendices. Index.

#	Onlineshop	Preis CHF	Versand CHF	Total CHF
1	Seller	0.00	0.00	0.00